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Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

Published online by Cambridge University Press:  10 February 2011

Mike R. Lazell ,
Paul O'brien ,
David J. Otway  and
Jin-Ho Park
Mike R. Lazell
Affiliation:
Manchester Materials Sciences Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
Paul O'brien
Affiliation:
Manchester Materials Sciences Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK paul.obrien@man.ac.uk
David J. Otway
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AY, UK
Jin-Ho Park
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AY, UK Email: j.h.park@ic.ac.uk
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Abstract

Several single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

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