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Excimer Laser Amorphous Silicon Film Crystallization: A Study of Time Resolved Reflectivity Measurements

Published online by Cambridge University Press:  01 January 1993

C. Summonte ,
M. Bianconi  and
D. Govoni
C. Summonte
Affiliation:
CNR-LAMEL,via Castagnoli 1, 40126 Bologna Italy
M. Bianconi
Affiliation:
CNR-LAMEL,via Castagnoli 1, 40126 Bologna Italy
D. Govoni
Affiliation:
CNR-LAMEL,via Castagnoli 1, 40126 Bologna Italy
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Abstract

Time Resolved Reflectivity during XeCl pulsed laser irradiation of amorphous silicon films deposited on glass was measured. Simulation of the process by a Heat Flow Calculation in which explosive crystallization was not forced to occur, predicts the coexistence of partial bulk nucleation and a traveling molten layer. Optical simulation of Time Resolved Reflectivity was used to critically examine the Heat Flow Calculation results, substantially confirming the existence of a mixture of thermodynamical phases.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 539
Copyright
Copyright © Materials Research Society 1993

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References

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