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Evidence For Non-Correlation Between The 0.15 eV And 0.44 eV Cu-Related Acceptor Levels In GaAs

Published online by Cambridge University Press:  15 February 2011

K. Leosson  and
H. P. Gislason
K. Leosson
Affiliation:
Science Institute, University of Iceland, Dunhagi 3, Reykjavik, Iceland
H. P. Gislason
Affiliation:
Science Institute, University of Iceland, Dunhagi 3, Reykjavik, Iceland
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Abstract

We present investigations on the two dominating acceptor levels observed in Cu-diffused GaAs which have frequently been attributed to the two ionization levels of a double CuGa acceptor. We employed plasma hydrogenation and lithium diffusion followed by reverse-bias and zero-bias annealing to passivate and subsequently reactivate the Cu-related acceptor levels. Deep-level current-transient spectroscopy measurements reveal that the two levels are independently reactivated, strongly indicating that they arise from different defects.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 453
Copyright
Copyright © Materials Research Society 1997

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