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Erbium Tris(Amide) Compounds as Source Molecules FOR Rare Earth Doping of Semiconducting Materials

Published online by Cambridge University Press:  10 February 2011

Oliver Just ,
Anton C. Greenwald  and
William S. Rees Jr.
Oliver Just
Affiliation:
Georgia Institute of Technology, School of Chemistry and Biochemistry, School of Materials Science and Engineering, and Molecular Design Institute, Atlanta, GA 30332–0400
Anton C. Greenwald
Affiliation:
Spire Corporation, One Patriot Park, Bedford, MA 01730–2396
William S. Rees Jr.
Affiliation:
Georgia Institute of Technology, School of Chemistry and Biochemistry, School of Materials Science and Engineering, and Molecular Design Institute, Atlanta, GA 30332–0400
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Abstract

The homoleptic compound erbium{tris[bis (trimethylsilyl)]amide} displays high doping ability for incorporation of the rare earth element into epitaxially grown semiconducting host materials for fabrication of temperature-independent, monochromatic solid state optoelectronic devices. Electronic characteristics derived from erbium doped semiconducting films have been obtained. Several more volatile and lower melting representatives of this class of compounds have been synthesized, characterized by various analytical techniques and examined for their suitability to incorporate optically-active erbium centers into a semiconducting environment.

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