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Electro-Optical Studies of Vanadium in GaP by Space Charge Spectroscopies

Published online by Cambridge University Press:  22 February 2011

Georges Bremond ,
G. Guillot ,
P. Roura  and
W. Ulrici
Georges Bremond
Affiliation:
Laboratoire de Physique de la Matière (UA CNRS 358), INSA de Lyon, Bât.502. F-69621 Villeurbanne Cédex, France
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (UA CNRS 358), INSA de Lyon, Bât.502. F-69621 Villeurbanne Cédex, France
P. Roura
Affiliation:
Catedra d'Electronica, Universitat Barcelona, Diagonal 645, Barcelona 08128, Spain
W. Ulrici
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 0–1086 Berlin, Germany
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Abstract

A complete understanding of the electrical and optical properties of the Vanadium related donor level (VGa 3+/VGa 4+) in GaP is deduced from a number of different characterization techniques (deep level transient and deep level optical spectroscopies, optical absorption) performed on p-type V doped GaP. The VGa 3+/VGa 4+ donor level is located at Ev+0.25eV. This assignment is based on the correlation of optical absorption spectra and the photoneutralization cross-section σp°(hv) curve obtained by deep level optical spectroscopy confirming that this technique is very unique for deep level identification in semiconductor materials.

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References

REFERENCES

[1] Clerjaud, B., J.Phys.C: Sol.Stat.Phys. 18, 3615 (1985)CrossRefGoogle Scholar
[2] Kreissl, J. and Ulrici, W., Phys. Stat.Sol. b 136, K133 (1986)CrossRefGoogle Scholar
[3] Ulrici, W., Eaves, L., Friedland, K., Halliday, D.P., Phys.Stat.Sol. b 141, 191 (1987)CrossRefGoogle Scholar
[4] Sahraoui-Tahar, M., Salce, B., Challis, L.J., Buttler, N., Ulrici, W. and Cockayne, B., J.Phys:Condensed Matter 1, 9313 (1989)Google Scholar
[5] Ulrici, W., Kreissl, J., Hayes, D.G., Eaves, L., Friedland, K., Materials Science Forum, Vol 38–41 875 (1989)Google Scholar
[6] Brémond, G., Guillot, G., Nouailhat, A. and Picoli, G., J.Appl.Phys. 5p 2038 (1986)CrossRefGoogle Scholar
[7] Brémond, G., Guillot, G., Roura, P. and Ulrici, W., Semicond.Sci.Technol. 6, 85 (1991)CrossRefGoogle Scholar
[8] Chantre, A., Vincent, G. and Bois, D., Phys Rev B23, 5335( 1981)CrossRefGoogle Scholar
[9] Delerue, C., Lannoo, M., Brémond, G., Guillot, G. and Nouailhat, A., Europhys.Lett. 9, 373 (1989)CrossRefGoogle Scholar
[10] Clerjaud, B., Cote, D., Naud, C. Brémond, G., Guillot, G. and Nouailhat, A., J.Cryst.Growth 83, 194 (1987)CrossRefGoogle Scholar
[11] Langer, J.M., Delerue, C., Lannoo, M. and Heinrich, H., Phys.Rev. B38, 773 (1988)Google Scholar