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Electrical & Structural Properties of TiSi2 Films

Published online by Cambridge University Press:  28 February 2011

N.M. Ravindra ,
T. Fink ,
R.P. Moerkirk Jr  and
D. Fathy
N.M. Ravindra
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
T. Fink
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
R.P. Moerkirk Jr
Affiliation:
U.S. Army Electronics, Technology & Devices Laboratory, Fort Monmouth, NJ 07703
D. Fathy
Affiliation:
D. Fathy, Solid State Division, Oak Ridge National Labs, Oak Ridge, TN 37831
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Abstract

Studies of the electrical and structural properties of TiSi2 films formed during the fabrication of shallow junctions by ion implanting As+ into p–Si through Ti films are reported here. Electrical measurements of the temperature dependent specific contact resistance and structural measurements such as transmission electron microscopy have been performed on these device structures. The specific contact resistance is seen to decrease with increasing measurement temperature. These studies have been carried out on furnace and rapid thermally annealed films.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 459
Copyright
Copyright © Materials Research Society 1988

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