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Electrical Activation of Heavily Doped Arsenic Implanted Silicon

Published online by Cambridge University Press:  25 February 2011

J. Said ,
H. Jaouen ,
G. Ghibaudo ,
I. Stoemenos  and
P. Zaumseil
J. Said
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs, ENSERG, 23 Rue des Martyrs, B.P. 257, 38016 Grenoble Cedex, Frances
H. Jaouen
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs, ENSERG, 23 Rue des Martyrs, B.P. 257, 38016 Grenoble Cedex, Frances
G. Ghibaudo
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs, ENSERG, 23 Rue des Martyrs, B.P. 257, 38016 Grenoble Cedex, Frances
I. Stoemenos
Affiliation:
Department of Physics, University of Thessaloniki, Greece
P. Zaumseil
Affiliation:
Akademie der Wissenchaften der DDR, Institut fur Halbeiterphysik, Frankfurt, Krosingstr 2, 1200-Frankfurt, GDR
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Abstract

The combination of electrical, Transmission Electron Microscopy and Triple Crystal X-ray Diffraction measurements allow us to separate the existence of a local impurity activation process from the amorphous- crystal transformation. The local process occurs in the highly damaged surface layer induced by the arsenic implantation and is efficient well below the Solid Phase Epitaxy transition temperature. It is suggested that point defect migration should play an important role in the electrical impurity activation at low annealing temperatures.

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References

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