Hostname: page-component-54dcc4c588-64p75 Total loading time: 0 Render date: 2025-10-12T05:20:03.419Z Has data issue: false hasContentIssue false
  • English
  • Français

Electric Field Effect in High-Tc Superconductors, Evaluation of Field-Induced Superconductivity and Device Applications

Published online by Cambridge University Press:  26 February 2011

J. Mannhart  and
A. Kleinsasser
J. Mannhart
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland
A. Kleinsasser
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights NY 10598, USA
Get access

Abstract

In the past two years, it has been demonstrated that applied electric fields can be used to modulate significantly the normal state resistivity, the critical temperature and the critical current density of high-Tc films. Whereas earlier publications focussed on experimental aspects of high-Tc field effects, this contribution will discuss the conditions that are required to induce superconductivity on the surface of insulators. In addition, evaluations for performance limits of potential high-Tc field effect devices will be presented.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Glover, R. E. and Sherrill, M. D., Phys. Rev. Lett. 5, 248 (1960).Google Scholar
[2] Stadler, H. L., Phys. Rev. Lett. 14, 979 (1965).Google Scholar
[3] Fiory, A. T. and Hebard, A. F., Phys. Rev. Lett. 52, 2057 (1984).Google Scholar
[4] Gurvitch, M., Stormer, H. L., Dynes, R. C., Graybeal, J. M., and Jacobson, D. C., in Extended Abstracts, edited by Bevk, J. and Braginski, A. I. (Mater. Res. Soc. Proc. 5, 1986) pp. 47–49.Google Scholar
[5] Bogatko, V. V. and Venevtsev, Yu. N., Sov. Phys. Solid State 29, 1654 (1988).Google Scholar
[6] Fiory, A. T-., Hebard, A. F., Eick, R. H., Mankiewich, P. M., Howard, R. E., and O'Malley, M. L., Phys. Rev. Lett. 65, 3441 (1990).Google Scholar
[7] Levy, A., Falck, J. P., Kastner, M. A., Gallagher, W. J., Gupta, A., and Kleinsasser, A. W., J. Appl. Phys. 69, 4439 (1991).Google Scholar
[8] Moore, D. F., in Superconducting Thin Films for Device Applications, Proceedings of the 2nd Workshop on High-Tc Electron Devices, R&D Association for Future Electron Devices, June 7–9, 1989, in Shikabe, Japan, pp. 281–284.Google Scholar
[9] Tarutani, Y., Saitoh, S., Fukazawa, T., Kawabe, U., J. Appl. Phys. 69, 1778 (1991).Google Scholar
[10] Kabasawa, U., Asano, K., and Kobayashi, T., Jpn. J. Appl. Phys. 29, L86 (1990).Google Scholar
[11] Mannhart, J., Bednorz, J. G., Müller, K. A., and Schlom, D. G., Z. Phys. B 83, 307 (1991).Google Scholar
[12] Xi, X.X., Li, Q., Doughty, C., Kwon, C., Bhattacharya, S., Findikoglu, A. T., and Venkatesan, T., Appl. Phys. Lett. 59, 3470 (1991).Google Scholar
[13] Mannhart, J., “Changes in the Superconducting Properties of High-Tc Cuprates Produced by Applied Electric Fields,” to be published in Mod. Phys. Lett. B 6, (1992).Google Scholar
[14] Mannhart, J., Schlom, D. G., Bednorz, J.G., and Müller, K. A., Phys. Rev. Lett. 67, 2099 (1991).Google Scholar
[15] Xi, X.X., Doughty, C., Walkenhorst, A., Kwon, C., Li, Q., and Venkatesan, T., Phys. Rev. Lett. 68, 1240 (1992).Google Scholar
[16] Sze, S. M., Physics of Semiconductor Devices (Wiley, New York, 1981), p. 362.Google Scholar
[17] Brazovski, S. A. and Yakovenko, V., Phys. Lett. A 132, 290 (1988).Google Scholar
[18] Haviland, D. B., Liu, Y., and Goldman, A. M., Phys. Rev. Lett. 62, 2180 (1989).Google Scholar
[19] Eidelloth, W., Levy, A., Chang, B. P., and Gallagher, W.J. (unpublished).Google Scholar
[20] Walkenhorst, A., Doughty, C., Xi, X.X., Mao, S.N., Li, Q., Venkatesan, T., and Ramesh, R., Appl. Phys. Lett. 60, 1744 (1992).Google Scholar
[21] Müller, K. A. and Burkard, H., Phys. Rev. B19, 3593 (1979).Google Scholar
[22] Levy, A., Falck, J. P., Kastner, M. A., Birgeneau, R. J., Fiory, A. T., Hebard, A. F., Gallagher, W. J., and Kleinsasser, A. W. (unpublished).Google Scholar
[23] Kleinsasser, A. W. and Gallagher, W. J., “Three Terminal Devices,” in Superconducting Devices, edited by Rudman, D. and Ruggiero, S. (Academic Press, Boston, 1990).Google Scholar
[24] Nishino, T., Hatano, M., Hasegawa, H., Murai, F., Kure, T., Hirawa, A., Yagi, K., and Kawabe, U., IEEE Electron. Dev. Lett. EDL-10, 61 (1989).Google Scholar
[25] Faris, S. M., U. S. Patent No. 4 334 158; Physica B 126, 165 (1984);Google Scholar
Faris, S. M., Raider, S. I., Gallagher, W. J., and Drake, R. E., IEEE Trans. Magn. MAG-19, 807 (1983).Google Scholar
[26] Kleinsasser, A. W., Jackson, T. N., Mclnturff, D., Rammo, F., Pettit, G. D., and Woodall, J. M., Appl. Phys. Lett. 55 1909, (1989).Google Scholar