Hostname: page-component-54dcc4c588-scsgl Total loading time: 0 Render date: 2025-10-09T04:55:29.416Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Mechanical Strain on Amorphous Silicon Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

H. Gleskova ,
S. Wagner ,
W. Soboyejo  and
Z. Suo
H. Gleskova
Affiliation:
Princeton University, Department of Electrical Engineering
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering
W. Soboyejo
Affiliation:
Department of Mechanical and Aerospace Engineering, Princeton, NJ 08544
Z. Suo
Affiliation:
Department of Mechanical and Aerospace Engineering, Princeton, NJ 08544
Get access

Abstract

We evaluated a-Si:H TFTs fabricated on polyimide foil under uniaxial compressive or tensile strain. The strain was induced by bending or stretching. All experiments confirmed that the on-current and hence the electron linear mobility depend on strain å as μ = μ0 (1 + 26·ε), where tensile strain has a positive sign. Upon the application of stress the mobility changes instantly and then remains unchanged in measurements up to 40 hours. In the majority of the TFTs the off-current and leakage current do not change. In tension, the TFTs fail mechanically at a strain of ∼ 3x10-2 but recover if the strain is released ‘immediately’.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A3.4
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Theiss, S.D. and Wagner, S., IEEE Electron Dev. Lett. 17, 264 (1996).Google Scholar
2. Wu, M., Pangal, K., Sturm, J.C., and Wagner, S., Appl. Phys. Lett. 75, 2244 (1999).Google Scholar
3. Gleskova, H., Wagner, S., and Suo, Z., Appl. Phys. Lett. 75, 3011 (1999).Google Scholar
4. Parsons, G.N., Yang, C.S., Arthur, C.B., Klein, T.M., and Smith, L., in Flat Panel Display Materials – 1998, edited by Parsons, G.N., Tsai, C.C., Fahlen, T.S., and Seager, C.H., (Mat. Res. Soc. Proc. 508, Pittsburgh, PA, 1998) pp. 19–24.Google Scholar
5. Gleskova, H., Wagner, S. and Suo, Z., in Flat Panel Display Materials – 1998, edited by Parsons, G.N., Tsai, C.C., Fahlen, T.S., and Seager, C.H., (Mat. Res. Soc. Proc. 508, Pittsburgh, PA, 1998) pp. 73–78.Google Scholar
6. Sandoe, J.N., in 1998 SID International Symposium, Digest of Technical Papers, Vol. 29, edited by Morreale, J., (Soc. for Inf. Display, Santa Ana, CA, 1998), pp. 293–296.Google Scholar
7. Lueder, E., Muecke, M. and Polach, S., in Proc. of the 18th Int. Display Research Conf., Asia Display '98, edited by Jang, Jin, (Soc. for Inf. Display, Santa Ana, CA, 1998) pp. 173–177.Google Scholar
8. Constant, A., Burns, S.G., Shanks, H., Gruber, C., Landin, A., Schmidt, D., Thielen, C., Olympie, F., Schumacher, T., and Cobbs, J., The Electrochemical Society Proceedings, Vol. 94-35, p. 392, 1995.Google Scholar
9. Thomasson, D.B., Bonse, M., Huang, J.R., Wronski, C.R., and Jackson, T.N., in Int. Electron Devices Meeting – 1998, (IEEE Technical Digest, Piscataway, NJ, 1998) pp. 253–256.Google Scholar
10. Theiss, S.D., Carey, P.G., Smith, P.M., Wickboldt, P., Sigmon, T.W., Tung, Y.J., and King, T.J., in Int. Electron Devices Meeting – 1998, (IEEE Technical Digest, Piscataway, NJ, 1998) pp. 257–260.Google Scholar
11. Kreuz, J.A., Milligan, S.N., and Sutton, R.F., DuPont Films Technical Paper 3/94, Reorder No. H-54504.Google Scholar
12. Gleskova, H., Wagner, S., Gaŝparík, V., and Kováè, P., Electrochem, J.. Soc. 148, G370 (2001).Google Scholar
13. Gates, S.M., in Amorphous and Microcrystalline Silicon Technology – 1997, edited by Wagner, S., Hack, M., Schiff, E.A., Schropp, R., and Shimizu, I. (Mat. Res. Soc. Proc. 467, Pittsburgh, PA, 1997) pp. 843–849.Google Scholar
14. , Jansen and Machonkin, M.A., J. Vac. Sci. Technol. A 6, 1696 (1988).Google Scholar
15. Sherman, S., Wagner, S., and Gottscho, R.A., Appl. Phys. Lett. 69, 3242 (1996).Google Scholar
16. Sherman, S., Lu, P.Y., Gottscho, R.A., and Wagner, S., in Amorphous Silicon Technology – 1995, edited by Hack, M., Schiff, E.A., Madan, A., Powell, M., and Matsuda, A. (Mat. Res. Soc. 377, Pittsburgh, PA, 1995) pp. 749–753.Google Scholar
17. Cody, G.D., Tiedje, T., Abeles, B., Brooks, B., and Goldstein, Y., Phys. Rev. Lett. 47, 1480 (1981).Google Scholar
18. Welber, B. and Brodsky, M.H., Phys. Rev. B 16, 3660 (1977).Google Scholar
19. Tanaka, L., Solid State Commun. 60, 295 (1986).Google Scholar
20. Spear, W.E. and Heintze, M., Phil. Mag. B 54, 343 (1986).Google Scholar