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Dual-Chamber Plasma Deposition of a-Si:H Solar Cells at High Rates Using Disilane

Published online by Cambridge University Press:  28 February 2011

G. Rajeswaran ,
P.E. Vanier ,
R.R. Corderman  and
F.J. Kampas
G. Rajeswaran
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
P.E. Vanier
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
R.R. Corderman
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
F.J. Kampas
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
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Abstract

The use of a separated chamber deposition system for the fabrication of a-Si:H solar cells from disilane at high deposition rates results in a substantial improvement in short circuit current compared to that obtained from a single-chamber system. The spectral responses of cells fabricated in the dual-chamber mode are compared to those made in the single-chamber mode. The results are interpreted by assuming that the rate of removal of boron contaminants from the chamber is independent of deposition rate.

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References

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