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Current Transport in Low-Resistance Metal-InP Contacts

Published online by Cambridge University Press:  22 February 2011

Thomas Clausen  and
Otto Leistiko
Thomas Clausen
Affiliation:
Mikroelektronik Centret, Technical University of Denmark, Bldg. 345E, DK-2800 Lyngby, Denmark
Otto Leistiko
Affiliation:
Mikroelektronik Centret, Technical University of Denmark, Bldg. 345E, DK-2800 Lyngby, Denmark
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Abstract

The limiting transport processes for current flow across metal-semiconductor (MS) ohmic contacts to n- and p-type InP have been investigated for Au-based metallizations containing the doping elements Germanium and Zinc. It has been found that the Schottky barrier is lowered and in some cases vanishes during annealing. The current flow for an optimal ohmic contact is diffusion limited by a Fermi potential difference between the alloyed metallization and the bulk InP. For non-optimal ohmic contacts the current flow is also limited by thermionic emission across a low effective Schottky barrier.

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References

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