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Curing Study of Hydrogen Silsesquioxane Under H2/N2 Ambient

Published online by Cambridge University Press:  17 March 2011

Huey-Chiang Liou ,
Evan Dehate ,
Jerry Duel  and
Fred Dall
Huey-Chiang Liou
Affiliation:
Dow Corning Corporation, Semiconductor Fabrication Materials, Midland, MI 48686-0994
Evan Dehate
Affiliation:
Dow Corning Corporation, Semiconductor Fabrication Materials, Midland, MI 48686-0994
Jerry Duel
Affiliation:
Dow Corning Corporation, Semiconductor Fabrication Materials, Midland, MI 48686-0994
Fred Dall
Affiliation:
Dow Corning Corporation, Semiconductor Fabrication Materials, Midland, MI 48686-0994
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Abstract

Thin film properties of hydrogen silsesquioxane (HSQ) cured at different temperature under N2 and H2/N2 ambients have been studied. In this study, it was found that compared to an N2 ambient, film curing in an H2/N2 ambient will impact HSQ properties when the temperature is 400°C – 500°C. H2/N2 ambient can be used to minimize the dielectric constant while increasing modulus of the films. The data indicates that H2 can minimize the oxidation of the HSQ films and maintain the dielectric properties.

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References

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997.Google Scholar
2. Jeng, S. P., Taylor, K., Seha, T., Chang, M., Fattaruso, J., and Havemann, R., Proceedings of VLSI symposium, Kyoto, Japan, 1995, pp. 15–21.Google Scholar
3. Loboda, M., Grove, C. M., Schneider, R. F., J. Electrochem. Soc., 145, 1998, p. 2861.10.1149/1.1838726Google Scholar
4. Liou, H.-C. and Pretzer, J., Thin Solid Films, 335, 1998, pp. 186–191.10.1016/S0040-6090(98)00881-5Google Scholar
5. Bremmer, J., Liu, Y., Gruszynski, K., and Dall, F., Mater. Res. Symp. Proc. 476, 1997, p. 37.10.1557/PROC-476-37Google Scholar
6. Pharr, G. M. and Oliver, W. C., MRS Bulletin, July, 1992, p. 28–33.10.1557/S0883769400041634Google Scholar
7. Bremmer, J., Gruazynski, K., Saha, C., and Chung, K., VMIC 1998, P. 631.Google Scholar