Hostname: page-component-54dcc4c588-2bdfx Total loading time: 0 Render date: 2025-10-12T15:54:48.735Z Has data issue: false hasContentIssue false
  • English
  • Français

Computer Modelling of Laser Annealing

Published online by Cambridge University Press:  15 February 2011

P. Baeri
P. Baeri*
Affiliation:
Istituti di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
Get access

Abstract

Heat flow calculations, based on the main assumption that the energy of the incident pulse is instantaneously and locally converted into heat, are used to review the results of laser pulse annealing and impurities behaviour in ion implanted semiconductors. The crystallization behaviour of amorphous layers, the velocity of the solid-liquid interface and impurity redistribution are detailed with the main emphasis on the relevance of the parameters (laser wavelen gth, pulse duration and energy density, substrate temperature, etc.) that can be experimentally controlled. Comparison with the latest experimental results is also given.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 151
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Baeri, P. et al. , J. Appl.Phys. 50,788 (1979)Google Scholar
2. Auston, D.H. et al. , Laser Interaction and Laser Processing 1978 edited by Ferris, S.D., Leamy, H.J. and Poate, J.M., A.I.P.Conference proceeding n.50 p.ll Google Scholar
3. Wood, R.F. and Giles, G.E., Phys.Rev.B 23, 2923 (1981)CrossRefGoogle Scholar
4. Lietoila, A. and Gibbons, J.F., Laser and Electron-Beam Solid Interactions and Materials Processing edited by J.F.Gibbons, L.D.Hess and T.W;Sigmon Proceddings of the MRS 1980Google Scholar
5. Baeri, P. et al. , Appl.Phys.Lett. 33, 137 (1978)Google Scholar
6. Wang, J.C. et al. , same of ref.2 p.123Google Scholar
7. Rimini, E. et al. , same of ref.2 p.259Google Scholar
8. Bagley, B.G. and Chen, H.S., same of ref.2 p.97Google Scholar
9. Baeri, P. et al. , same of reference 4 pag.67Google Scholar
10. Chen, H.S. and Turnbull, D., J.Appl.Phys. 40, 4214 (1969)Google Scholar
11. Spaepen, F. and Turnbull, D., same of reference 2 pag.73Google Scholar
12. Baeri, P. et al. , Phys.Rev.Lett. 45, 2036 (1980)Google Scholar
13. Yoffa, E.J., Appl.Phys.Lett. 36, 37 (1980)CrossRefGoogle Scholar
14. Flemings, M.C., Solidification Processing McGraw-Hill 1974 p. 306 Google Scholar
15. Jackson, K.A., referred as private comunication by W.L.Brown in ref.4 p.l.Google Scholar
16. Baeri, P. et al. , Appl.Phys.Lett. 37,912 (1980)Google Scholar
17. Baeri, P. et al. , Appl.Phys.Lett. 38, 800 (1981)Google Scholar
18. White, C.W. et al. , same of ref.4 pag.59Google Scholar
19. Poate, J.M. and Foti, G., private communication.Google Scholar