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Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

Published online by Cambridge University Press:  09 June 2014

Y. Morita ,
Y. Hayashi ,
H. Tsuchiura  and
M. Nishitani
Y. Morita
Affiliation:
Graduate School of Engineering, Osaka University, Suita, Osaka, JAPAN
Y. Hayashi
Affiliation:
Graduate School of Engineering, Osaka University, Suita, Osaka, JAPAN
H. Tsuchiura
Affiliation:
Department of Applied Physics, Tohoku University, Sendai, JAPAN
M. Nishitani
Affiliation:
Graduate School of Engineering, Osaka University, Suita, Osaka, JAPAN
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Abstract

Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.

Keywords

thermoelectricthin filmsputtering

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1642: Symposium BB – Thermoelectric Materials—From Basic Science to Applications , 2014 , mrsf13-1642-bb08-09
Copyright
Copyright © Materials Research Society 2014 

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