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A Chemical Bonding Model for Photo-Induced Defects in Hydrogenated Amorphous Silicon (a-Si:H): Intrinsic and Extrinsic Reaction Pathways

Published online by Cambridge University Press:  15 February 2011

G. Lucovsky  and
H. Yang
G. Lucovsky
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695
H. Yang
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695
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Abstract

In device grade a-Si:H photo- or light-induced defect generation is an intrinsic effect for impurity concentrations of oxygen and nitrogen below about 1019 to 1020 cm−3; however, at higher concentrations it increases with increasing impurity content. Charged defect configurations are identified by empirical chemistry and are studied by ab initio calculations. This paper addresses: i) the chemical stability of charged defects, ii) the reaction pathways for defect metastability, and iii) the transition between extrinsic and intrinsic behavior.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 31
Copyright
Copyright © Materials Research Society 1997

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References

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