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Characterization of ErAs/GaAs and GaAs/ErAs/GaAs Structures

Published online by Cambridge University Press:  28 February 2011

Jane G. Zhu ,
Chris J. Palmstrøm ,
Suzanne Mounier  and
C. Barry Carter
Jane G. Zhu
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
Chris J. Palmstrøm
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701
Suzanne Mounier
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701
C. Barry Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
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Abstract

A series of ErAs/GaAs and GaAs/ErAs/GaAs epilayers have been grown on (100) GaAs substrates by molecular-beam epitaxy. Misfit dislocations at the ErAs/GaAs interface have been analyzed using the weak-beam technique of transmission electron microscopy. The microstructure of GaAs/ErAs/GaAs layers have been characterized using conventional and high-resolution electron microscopy. Twinning inside the upper GaAs layer is the major defect. Although the desired epitactic (100) GaAs on (100) ErAs does dominate, small grains of GaAs with (111) or {122} orientations have been observed at the GaAs/ErAs heterojunction.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 325
Copyright
Copyright © Materials Research Society 1990

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References

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