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The Characteristics of LPCVD Aluminum Films: Nucleation and Selectivity

Published online by Cambridge University Press:  25 February 2011

K.-I. Lee ,
Y.-S. Kim  and
S.-K. Joo
K.-I. Lee
Affiliation:
Dept. of Metallurgical Eng., Seoul National Univ., Seoul, 151–742, KOREA
Y.-S. Kim
Affiliation:
Dept. of Metallurgical Eng., Seoul National Univ., Seoul, 151–742, KOREA
S.-K. Joo
Affiliation:
Dept. of Metallurgical Eng., Seoul National Univ., Seoul, 151–742, KOREA
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Abstract

Growth kinetics of CVD Al films using TIBA(Tri-IsoButyl-Aluminum) as a source material were investigated. Nucleation activation energy of aluminum on the silicon substrate was determined to be 3.2 eV for the first time in this work. It turned out that selectivity between Si and SiO2 was very sensitive to the substrate temperature during deposition, which could be well explained from the nucleation activation energy derived in this work. It was found that the surface topology of aluminum films could be improved by reduction of nucleation activation energy through pre-treatment of the substrate.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 197
Copyright
Copyright © Materials Research Society 1993

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References

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