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Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing

Published online by Cambridge University Press:  22 February 2011

R. Angelucci ,
C. Y. Wong ,
J. Y.-C. Sun ,
G. Scilla ,
P. A. McFarland ,
A. C. Megdanis  and
E. Landi
R. Angelucci
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
C. Y. Wong
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
J. Y.-C. Sun
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
G. Scilla
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
P. A. McFarland
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
A. C. Megdanis
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
E. Landi
Affiliation:
CNR-LAMEL Institute, 40126 Bologna, Italy
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Abstract

The feasibility and advantages of using rapid thermal annealing to achieve a proper n+ polysilicon work function are demonstrated. Our data shows that RTA can be used to activate arsenic in the polysilicon gate after a regular furnace anneal or to diffuse and activate arsenic without any prior furnace anneal. Interface states and fixed charges due to RTA can be annealed out at 500°C for 30 min in forming gas. New insights into the diffusion, segregation, and activation of As in polysilicon during furnace and/or rapid thermal annealing have been obtained.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 285
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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