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Capacitance Studies of Light-Induced Effects in Undoped Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

K. Zellama ,
J.D. Cohen  and
J.P. Harbison
K. Zellama
Affiliation:
University of Oregon, Department of Physics, Eugene, Oregon 97403
J.D. Cohen
Affiliation:
University of Oregon, Department of Physics, Eugene, Oregon 97403
J.P. Harbison
Affiliation:
Bell Communications Research Inc., Murray Hill, New Jersey 07974
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Abstract

The effects of light saturation on the properties of undoped a-Si:H films were studied by a new capacitance profiling technique which can be used to directly determine changes in the dangling bond density of states near midgap. Coplanar conductivity and capacitance vs. temperature measurements save the changes in activation energies for electrical conductivity. These studies indicate that, while substantial increases in the dangling bond densities are observed for most samples, the detailed behavior of the light induced changes in these films are inconsistent with the creation of such defects by breaking weak valence band tail states.

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