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Buried Oxide Precipitates In A Si Wafer Due to He IONImplantation and High-Temperature Oxidation

Published online by Cambridge University Press:  17 March 2011

Sadao Nakashima ,
Jyoji Nakata ,
Junzou Hayashi  and
Kazuo Imai
Sadao Nakashima
Affiliation:
NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi, 243-0198, Japan
Jyoji Nakata
Affiliation:
Kanagawa University Faculty of Science, 2946, Tsuchiya, Hiratsuka, 259-1293, Japan
Junzou Hayashi
Affiliation:
NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi, 243-0198, Japan
Kazuo Imai
Affiliation:
NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi, 243-0198, Japan
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Abstract

A new method of producing a buried oxide is proposed. It involves implantinga silicon wafer with helium rather than oxygen ions and then subjecting itto high- temperature oxidation. The voids formed by helium ion implantationand subsequent annealing enhance the diffusion of oxygen atoms into thesilicon. The oxygen atoms cause thermal oxide to grow at the void/siliconinterface and transform the voids into buried oxide precipitates. Augerelectron spectroscopy revealed that the total number of oxygen atoms in theprecipitates was 9.3 × 1016 cm−2 and that the peakvalue of oxygen atom concentration in the wafer was approximately 25%.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O6.3
Copyright
Copyright © Materials Research Society 2001

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