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Barrier Properties of Tasi2 in Contact With Al-Metallization

Published online by Cambridge University Press:  22 February 2011

F. Neppl  and
U. Schwabe
F. Neppl
Affiliation:
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D 8000 Munich 83, FRG
U. Schwabe
Affiliation:
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D 8000 Munich 83, FRG
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Abstract

The reaction between cosputtered amorphous and polycrystalline tantalum silicide with Al-Si-metallization was investigated by means of Schottky and ohmic contacts on Si. Diffusson of Al and Si across the silicide was impeded up to 475 °C, as long as the silicide films contained excess Ta with respect to the TaSi2 stoichiometry. The results show that Al-Si with a thin Ta-rich tantalum silicide underlayer provides a VLSI-metallization with considerably reduced contact resistance, particularly for small contacts, and low Schottky barrier to n-Si without significant Si consumption from the substrate

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 587
Copyright
Copyright © Materials Research Society 1984

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References

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