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Au-assisted Growth of Indium Antimonide Nanowires by Chemical Vapor Deposition: Temperature and Growth Duration Effects

Published online by Cambridge University Press:  22 August 2011

Jiebin Zhong ,
Jian Lin ,
Miroslav Penchev ,
Mihrimah Ozkan  and
Cengiz S. Ozkan
Jiebin Zhong
Affiliation:
Department of Mechanical Engineering, University of California Riverside, 900 University Ave., Riverside, California 92521, USA
Jian Lin
Affiliation:
Department of Mechanical Engineering, University of California Riverside, 900 University Ave., Riverside, California 92521, USA
Miroslav Penchev
Affiliation:
Department of Electrical Engineering, University of California Riverside, 900 University Ave., Riverside, California 92521, USA
Mihrimah Ozkan
Affiliation:
Department of Electrical Engineering, University of California Riverside, 900 University Ave., Riverside, California 92521, USA
Cengiz S. Ozkan
Affiliation:
Department of Mechanical Engineering, University of California Riverside, 900 University Ave., Riverside, California 92521, USA
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Abstract

In this paper, we investigate the morphology variation of Au-assisted epitaxial InSb nanowires (NWs) dependence on growth temperature and growth duration by chemical vapor deposition (CVD). The NW length and tapering factor correlated to the NW morphology are determined as a function of growth temperature (300°C-480°C). Higher density and longer NWs were observed on the substrate as proportional to the growth duration. The growth direction of the NWs is <110> by Transmission Electron Microscopy (TEM) studies. The aim of this study is to gain better understanding of the III-V NWs growth mechanism and achieve control over the growth of InSb NWs.

Keywords

III-Vepitaxychemical vapor deposition (CVD) (deposition)

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee06-04
Copyright
Copyright © Materials Research Society 2011

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