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Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes

Published online by Cambridge University Press:  01 February 2011

R. Brüggemann ,
M. Rösch ,
S. Tardon  and
G.H. Bauer
R. Brüggemann
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, Germany Email: rudi.brueggemann@uni-oldenburg.de
M. Rösch
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, Germany Email: rudi.brueggemann@uni-oldenburg.de
S. Tardon
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, Germany Email: rudi.brueggemann@uni-oldenburg.de
G.H. Bauer
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, Germany Email: rudi.brueggemann@uni-oldenburg.de
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Abstract

We apply the publicly available device modeling tool SC-Simul for simulating experiments with user-defined heterojunction diodes to discuss the role of the electric field in solar cells. For amorphous silicon/crystalline silicon heterodiodes, the role of interface defects, an amorphous silicon buffer layer and low-cost crystalline silicon is studied by simulation of current-voltage characteristics and photoluminescence. Photoluminescence is sensitive to the minority carrier density in the volume of the device and can be used to monitor minority carrier properties in these diodes.

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