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Anisotropic Second Harmonic Generation Induced in Silicon andGermanium by Picosecond and Nanosecond Laser Pulses

Published online by Cambridge University Press:  25 February 2011

John A. Litwin ,
Henry M. Van Driel ,
John E. Sipe  and
John A. Litwin
John A. Litwin
Affiliation:
Department of Physics and Erindale College, University of Toronto, Toronto, Ontario, Canada, M5S 1A7
Henry M. Van Driel
Affiliation:
Department of Physics and Erindale College, University of Toronto, Toronto, Ontario, Canada, M5S 1A7
John E. Sipe
Affiliation:
Department of Physics and Erindale College, University of Toronto, Toronto, Ontario, Canada, M5S 1A7
John A. Litwin
Affiliation:
Department of Physics and Erindale College, University of Toronto, Toronto, Ontario, Canada, M5S 1A7
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Abstract

We have performed experimental and theoretical studies of the origins ofanisotropic second harmonic generation observed in reflection from (111) and(100) faces of crystal Ge and Si. Results, using 25 psec and 20 nsec 1.06and 0.53 μm pump beams allow us to conclude that induced plasmas have norole in the effect and that the mechanism for the nonlinearity is associatedwith quiescent surface dipolar or bulk quadrupolar effects. Dispersion inthe anisotropic behaviour is presented and the application of anisotropicharmonic generation to structural determinations of Si and Ge during laserannealing will be discussed.

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References

REFERENCES

1) Guidotti, D., Driscoll, T. A. and Gerritsen, H. J., Solid State Comm 46, 337 (1983); Driscoll, T. A. and Guidotti, D., Phys. Rev. B28, 1171 (1983).Google Scholar
2) Tom, H. W. K., Heinz, T. F., and Shen, Y. R., Phys. Rev. Lett. 51, 1983 (1983).Google Scholar
3) Shank, C. V., Yen, R. and Hirlimann, C., Phys. Rev. Lett. 51, 900 (1983).Google Scholar
4) Bloembergen, N., Chang, R. K., Jha, S. S. and Lee, C. H., Phys. Rev. 174, 813 (1968).Google Scholar
5) Wang, C. C. and Duminski, A. N., Phys. Rev. Lett. 20, 668 (1968).Google Scholar
6) Ortmann, L. and Vogt, H., Opt. Comm. 16, 234 (1976).Google Scholar
7) Preston, J. S. and van Driel, H. M., Phys. Rev. B30, 1950 (1984); van Driel, H. M., Lompré, L.-A., and Bloembergen, N. Appl. Phys. Lett. 44, 285 (1984).Google Scholar