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Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator

Published online by Cambridge University Press:  01 February 2011

Agata Sakic ,
Yann Civale ,
Lis K. Nanver ,
Cleber Biasotto  and
Vladimir Jovanovic
Agata Sakic
Affiliation:
a.sakic@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
Yann Civale
Affiliation:
y.civale@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
Lis K. Nanver
Affiliation:
l.k.nanver@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
Cleber Biasotto
Affiliation:
c.biasotto@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
Vladimir Jovanovic
Affiliation:
v.jovanovic@tudelft.nl, Delft University of Technology, Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics – DIMES, Delft, Netherlands
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Abstract

Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (100) Si substrate and have the ability to merge seamlessly over the oxide.

Keywords

epitaxyAlcrystalline

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References

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