Hostname: page-component-cb9f654ff-hqlzj Total loading time: 0 Render date: 2025-08-28T09:22:33.464Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots

Published online by Cambridge University Press:  29 November 2013

D. Bimberg ,
M. Grundmann  and
N.N. Ledentsov
Get access

Extract

The development and application of semiconductor light-emitting and laser diodes has been a huge success during the last 30 years in key areas of modern technology like communications, recording, and printing. Still there is ample room for improvement through combination of the atomlike properties for zero-dimensionally localized carriers in quantum dots (QDs) with state-of-the-art semiconductor-laser technology. Low, temperature-insensitive threshold current; high gain; and differential gain have been predicted since the early 1980s.

In the past two decades, the fabrication of QDs has been attempted using colloidal techniques (see the article by Nozik and Mićić in this issue), patterning, etching, and layer fluctuations (see the article by Gammon in this issue). However a break-through occurred recently through the employment of self-ordering mechanisms during epitaxy of lattice-mismatched materials (see the next section) for the creation of high-density arrays of QDs that exhibit excellent optical properties, particularly high quantum efficiency, up to room temperature. The zero-dimensional carrier confinement and subsequent atomlike electronic properties have a drastic impact on optical properties (see the section on Spectroscopy). Also intimately connected is the applicability of QDs as a novel gain medium in state-of-the-art laser diodes with superior properties (see the section on Lasers).

Information

Type
Semiconductor Quantum Dots
Information
MRS Bulletin , Volume 23 , Issue 2 , February 1998 , pp. 31 - 34
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1.Asada, M., Miyamoto, Y., and Suematsu, Y., IEEE J. Quantum Electron. 22 (1986) p. 1915.CrossRefGoogle Scholar
2.Arakawa, Y. and Sakaki, H., Appl. Phys. Lett. 40 (1982) p. 939.CrossRefGoogle Scholar
3.Goldstein, L., Glas, F., Marzin, J.Y., Charasse, M.N., and Le Roux, G., IEEE J. Quantum Electron. 47 (1985) p. 1099.Google Scholar
4.Guha, S., Madhukar, A., and Rajkumar, K.C., IEEE J. Quantum Electron. 57 (1990) p. 2110.Google Scholar
5.Tabuchi, M., Noda, S., and Sasaki, A., in Science and Technology of Mcsoscopic Structures, edited by Namba, S., Hamaguchi, C., and Ando, T. (Springer, Tokyo, 1992) p. 379.CrossRefGoogle Scholar
6.Leonard, D., Krishnamurthy, M., Reaves, C.M., DenBaars, S.P., and Petroff, P.M., Appl. Phys. Lett. 63 (1993) p. 3203.CrossRefGoogle Scholar
7.Ledentsov, N.N., Grundmann, M., Kirstaedter, N., Christen, J., Heitz, R., Böhrer, J., Heinrichsdorff, F., Bimberg, D., Ruvimov, S.S., Werner, P., Richter, U., Gösele, U., Heydenreich, J., Ustinov, V.M., Egorov, A.Yu., Maximov, M.V., Kop'ev, P.S., and Alferov, Zh.I., Proc. 22nd Int. Conf. on Phys. Semicond., vol. 3, edited by Lockwood, D.J. (World Scientific, Singapore, 1995) p. 1855.Google Scholar
8.Kurtenbach, A., Eberl, K., and Shitara, T., Appl. Phys. Lett. 66 (1995) p. 361.CrossRefGoogle Scholar
9.Carlsson, N., Seifert, W., Petersson, A., Castrillo, P., Pistol, M.E., and Samuelson, L., Appl. Phys. Lett. 65 (1994) p. 3093; V.A. Shchukin, N.N. Ledentsov, M. Grundmann, P.S. Kop'ev, and D. Bimberg, Surf. Sci. 352 (1996) p. 117.CrossRefGoogle Scholar
10.Eaglesham, D.J. and Cerullo, M., Phys. Rev. Lett. 64 (1990) p. 1943.CrossRefGoogle Scholar
11.Stranski, I.N. and Krastanow, L., Sitzungsberichte d. Akad. d. Wissenschaften in Wien, Abt. IIb, Band 146 (1937) p. 797.Google Scholar
12.Bressler-Hill, V., Lorke, A., Varma, S., Petroff, P.M., and Weinberg, W.H., Phys. Rev. B 50 (1994) p. 8479.CrossRefGoogle Scholar
13.Cirlin, G.E., Guryanov, G.M., Golubok, A.O., Tipissev, S.Ya., Ledentsov, N.N., Kop'ev, P.S., Grundmann, M., and Bimberg, D., Appl. Phys. Lett. 67 (1995) p. 97.CrossRefGoogle Scholar
14.Heitz, R., Ramachandran, T.R., Kalburge, A., Xie, Q., Mukhametzhanov, I., Chen, P., and Madhukar, A., Phys. Rev. Lett. 78 (1997) p. 4071.CrossRefGoogle Scholar
15.Ledentsov, N.N., Grundmann, M., Kirstaedter, N., Schmidt, O., Heitz, R., Böhrer, J., Bimberg, D., Ustinov, V.M., Shchukin, V.A., Egorov, A.Yu., Zhukov, A.E., Zaitsev, S., Kop'ev, P.S., Alferov, Zh.I., Ruvimov, S.S., Werner, P., Gösele, U., and Heydenreich, J., Solid State Electron. 40 (1996) p. 785.CrossRefGoogle Scholar
16.Oshinowo, J., Nishioka, M., lshida, S., and Arakawa, Y., Appl. Phys. Lett. 65 (1994) p. 1421.CrossRefGoogle Scholar
17.Heinrichsdorff, F., Grundmann, M., Krost, A., Bimberg, D., Kosogov, A., and Werner, P., Appl. Phys. Lett. 68 (1996) p. 3284.CrossRefGoogle Scholar
18.Heinrichsdorff, F., Mao, M-H., Kirstaedter, N., Krost, A., Bimberg, D., Kosogov, A.O., and Werner, P., Appl. Phys. Lett. 71 (1997) p. 22.CrossRefGoogle Scholar
19.Grundmann, M., Ledentsov, N.N., Christen, J., Böhrer, J., Bimberg, D., Ruvimov, S.S., Werner, P., Richter, U., Gösele, U., Heydenreich, J., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E., Kop'ev, P.S., and Alferov, Zh.I., Phys. Status Solidi B 188 (1995) p. 249.CrossRefGoogle Scholar
20.Bimberg, D., Grundmann, M., Ledentsov, N.N., Ruvimov, S.S., Werner, P., Richter, U., Heydenreich, J., Ustinov, V.M., Kop'ev, P.S., and Alferov, Zh.I., Thin Solid Films 267 (1995) p. 32.CrossRefGoogle Scholar
21.Shchukin, V.A., Ledentsov, N.N., Kop'ev, P.S., and Bimberg, D., Phys. Rev. Lett. 75 (1995) p. 2968.CrossRefGoogle Scholar
22.Xie, Q., Madhukar, A., Chen, P., and Kobayashi, N.P., Phys. Rev. Lett. 75 (1995) p. 2542.CrossRefGoogle Scholar
23.Solomon, G.S., Trezza, J.A., Marshall, A.F., and Harris, J.S., Phys. Rev. Lett. 76 (1996) p. 952.CrossRefGoogle Scholar
24.Ledentsov, N.N., Shchukin, V.A., Grundmann, M., Kirstaedter, N., Böhrer, J., Schmidt, O., Bimberg, D., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E., Kop'ev, P.S., Zaitsev, S.V., Gordeev, N.Yu., Alferov, Zh.I., Borovkov, A.I., Kosogov, A.O., Ruvimov, S.S., Werner, P., Gösele, U., and Heydenreich, J., Phys. Rev. B 54 (1996) p. 8743.CrossRefGoogle Scholar
25.Sugiyama, Y., Nakata, Y., Imamura, K., Muto, Sh., and Yokoyama, N., Jpn. J. Appl. Phys. 35 (1997) p. 1320.CrossRefGoogle Scholar
26.Tersoff, J., Teichert, C., and Lagally, M.G., Phys. Rev. Lett. 76 (1996) p. 1675.CrossRefGoogle Scholar
27.Darhuber, A.A., Holy, V., Stangl, J., Bauer, G., Krost, A., Heinrichsdorff, F., Grundmann, M., Bimberg, D., Ustinov, V.M., Kop'ev, P.S., Kosogov, A.O., and Werner, P., Appl. Phys. Lett. 70 (1997) p. 955.CrossRefGoogle Scholar
28.Grundmann, M., Christen, J., Ledentsov, N.N., Böhrer, J., Bimberg, D., Ruvimov, S.S., Werner, P., Richter, U., Gösele, U., Heydenreich, J., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E., Kop'ev, P.S., and Alferov, Zh.I., Phys. Rev. Lett. 74 (1995) p. 4043.CrossRefGoogle Scholar
29.Marzin, J-Y., Gerard, J-M., Izrael, A., Barrier, D., and Bastard, G., Phys. Rev. Lett. 73 (1994) p. 716.CrossRefGoogle Scholar
30.Grundmann, M., Ledentsov, N.N., Stier, O., Bimberg, D., Ustinov, V.M., Kop'ev, P.S., and Alferov, Zh.I., Appl. Phys. Lett. 68 (1996) p. 979.CrossRefGoogle Scholar
31.Heitz, R., Grundmann, M., Ledentsov, N.N., Eckey, L., Veit, M., Bimberg, D., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E., Kop'ev, P.S., and Alferov, Zh.I., Appl. Phys. Lett. 68 (1996) p. 361.CrossRefGoogle Scholar
32.Benisty, H., Sotomayor-Torres, C.M., and Weisbuch, C., Phys. Rev. B 44 (1991) p. 10945.CrossRefGoogle Scholar
33.Heitz, R., Veit, M., Kalburge, A., Xie, Q., Grundmann, M., Chen, P., Ledentsov, N.N., Hoffmann, A., Madhukar, A., Bimberg, D., Ustinov, V.M., Kop'ev, P.S., and Alferov, Zh.I., in Proc. 8th Conf. on Modulated Semiconductor Structures (MSS-8) (Santa Barbara, July 1997).Google Scholar
34.Grundmann, M. and Bimberg, D., Phys. Rev. B 55 (1997) p. 9740.CrossRefGoogle Scholar
35.Grundmann, M. and Bimberg, D., Phys. Status Solidi B 203 (1997).3.0.CO;2-M>CrossRefGoogle Scholar
36.Schmidt, O.G., Kirstaedter, N., Ledentsov, N.N., Mao, M-H., Bimberg, D., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E., Maximov, M.V., Kop'ev, P.S., and Alferov, Zh.I., Electron. Lett. 32 (1996) p. 1302.CrossRefGoogle Scholar
37.Vahala, K.J., IEEE J. Quantum Electron. 24 (1988) p. 523.CrossRefGoogle Scholar
38.Asryan, L.V. and Suris, R.A., Semicond. Sci. Technol. 11 (1996) p. 1.CrossRefGoogle Scholar
39.Grundmann, M. and Bimberg, D., Jpn. J. Appl. Phys. 36 (1997) p. 4181.CrossRefGoogle Scholar
40.Kirstaedter, N., Ledentsov, N.N., Grundmann, M., Bimberg, D., Ustinov, V.M., Ruvimov, S.S., Maximov, M.V., Kop'ev, P.S., ZAlferov, h.I., Richter, U., Werner, P., Gosele, U., and Heydenreich, J., Electron. Lett. 30 (1994) p. 1416.CrossRefGoogle Scholar
41.Bimberg, D., Kirstaedter, N., Ledentsov, N.N., Alferov, Zh.I., Kop'ev, P.S., and Ustinov, V.M., JEEE J. Quantum Electron. 3 (1997) p. 1.Google Scholar
42.Shoji, H., Nakata, Y., Mukai, K., Sugiyama, Y., Sugawara, M., Yokoyama, N., and Ishikawa, H., Appl. Phys. Lett. 71 (1997) p. 193.CrossRefGoogle Scholar
43.Maksimov, M.V., Gordeev, N.Yu., Zaitsev, S.V., Kop'ev, P.S., Kochnev, I.V., Ledentsov, N.N., Sakharov, A.V., Tsatsul'nikov, A.F., Shernyakov, Yu.M., Alferov, Zh.I., and Bimberg, D., Semicond. 31 (1997) p. 124.CrossRefGoogle Scholar
44.Kirstaedter, K., Schmidt, O., Lendentsov, N.N., Bimberg, D., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E., Maximov, M.V, Kop'ev, P.S., and Alferov, Zh.I., Appl. Phys. Lett. 69 (1996) p. 1226.CrossRefGoogle Scholar
45.Mirin, R., Gossard, A., and Bowers, J., Electron. Lett. 32 (1996) p. 1732.CrossRefGoogle Scholar
46.Mao, M-H., Heinrichsdorff, F., Krost, A., and Bimberg, D., Electron. Lett. in press.Google Scholar
47.Kamath, K., Phillips, J., Jiang, H., Singh, J., and Bhattacharya, P., Appl. Phys. Lett. 70 (1997) p. 2952.CrossRefGoogle Scholar
48.Shernyakov, Yu.M., Egorov, A.Yu., Zhukov, A.E., Zaitsev, A.V., Kovsh, A.R., Krestnikov, I.L., Lunev, A.V., Ledentsov, N.N., Maximov, M.V., Sakharov, A.V., Ustinov, V.M., Zhen, Z., Kop'ev, P.S., Alferov, Zh.I., and Bimberg, D., Pis'ma Zh. Tech. Fiz. [Sov. Tech. Phys. Lett] 23 (1) (1997) p. 51.Google Scholar
49.Saito, H., Nishi, K., Ogura, I., Sugou, S., and Sugimoto, Y., Appl. Phys. Lett. 69 (1996) p. 3140.CrossRefGoogle Scholar
50.Huffaker, D.L., Baklenov, O., Graham, L.A., Streetman, B.G., and Deppe, D.G., Appl. Phys. Lett. 70 (1997) p. 2356.CrossRefGoogle Scholar
51.Lott, J.A., Ledentsov, N.N., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E., Kop'ev, P.S., Alferov, Zh.I., and Bimberg, D., Electron. Lett. 33 (1997) p. 1150.CrossRefGoogle Scholar
52.Saito, H., Nishi, K., Sugou, S., and Sugimoto, Y., Appl. Phys. Lett. 71 (1997) p. 590.CrossRefGoogle Scholar
53.Lott, J.A.et al. (unpublished manuscript).Google Scholar