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Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers

Published online by Cambridge University Press:  26 February 2018

M. Gaddy ,
V. Kuryatkov ,
V. Meyers ,
D. Mauch ,
J. Dickens ,
A. Neuber  and
S. Nikishin
M. Gaddy*
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79401 UNCLASSIFIED Distribution A: Approved for public release
V. Kuryatkov
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79401 UNCLASSIFIED Distribution A: Approved for public release
V. Meyers
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79401 UNCLASSIFIED Distribution A: Approved for public release
D. Mauch
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79401 UNCLASSIFIED Distribution A: Approved for public release
J. Dickens
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79401 UNCLASSIFIED Distribution A: Approved for public release
A. Neuber
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79401 UNCLASSIFIED Distribution A: Approved for public release
S. Nikishin
Affiliation:
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79401 UNCLASSIFIED Distribution A: Approved for public release
*
*(Email: m.gaddy@ttu.edu)
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Abstract

Characterization of three vendor’s bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: scanning electron microscopy, secondary ion mass spectroscopy, high resolution X-ray diffraction, cathodoluminescence, photoluminescence, and high voltage testing. Although the Fe doping level is significantly different for each growth method, both are promising for the fabrication of PCSS devices operating in the lock-on mode.

Keywords

x-ray diffraction (XRD)secondary ion mass spectroscopy (SIMS)optical properties

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Type
Articles
Information
MRS Advances , Volume 3 , Issue 3: Electronics, Magnetics and Photonics , 2018 , pp. 179 - 184
Copyright
Copyright © Materials Research Society 2018 

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References

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