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High rate deposition of thin film CdTe solar cells by pulsed dcmagnetron sputtering

Published online by Cambridge University Press:  19 January 2016

P.M. Kaminski ,
A. Abbas ,
S. Yilmaz ,
J. W. Bowers  and
J.M. Walls
P.M. Kaminski*
Affiliation:
Centre for Renewable Energy Systems Technology, (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Loughborough, Leicestershire, LE11 3TU, UK
A. Abbas
Affiliation:
Centre for Renewable Energy Systems Technology, (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Loughborough, Leicestershire, LE11 3TU, UK
S. Yilmaz
Affiliation:
Centre for Renewable Energy Systems Technology, (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Loughborough, Leicestershire, LE11 3TU, UK
J. W. Bowers
Affiliation:
Centre for Renewable Energy Systems Technology, (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Loughborough, Leicestershire, LE11 3TU, UK
J.M. Walls
Affiliation:
Centre for Renewable Energy Systems Technology, (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Loughborough, Leicestershire, LE11 3TU, UK
*
*Corresponding author: P.M.Kaminski@lboro.ac.uk
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Abstract

A new high rate deposition method has been used to fabricate thin film CdTephotovoltaic devices using pulsed dc magnetron sputtering. The devices have beendeposited in superstrate configuration on to a commercial fluorine doped tinoxide transparent conductor on soda lime glass. The cadmium sulphide and cadmiumtelluride thin films were deposited from compound targets. The magnetrons weremounted vertically around a cylindrical chamber and the substrate carrierrotates so that the layers can be deposited sequentially. The substrates wereheld at 200°C during deposition, a process condition previously foundto minimize the stress in the coatings. Optimization of the process involved anumber of parameters including control of pulse frequency, power and working gaspressure. The devices deposited using the process are exceptionally uniformenabling the CdTe absorber thickness to be reduced to ∼1um. Theas-deposited material is dense and columnar. The cadmium chloride treatmentincreases the grain size and removes planar defects. The microstructure of thefilms before and after activation has been characterized using a number oftechniques including transmission electron microscopy, Energy Dispersive mappingand these measurements have been correlated to device performance. Thedeposition rate is much higher than can be obtained with radio-frequencysputtering and is comparable with methods currently used in thin film CdTemodule manufacturing such as Vapour Transport Deposition and Close SpaceSublimation.

Keywords

photovoltaicsputteringtransmission electron microscopy (TEM)

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Type
Articles
Information
MRS Advances , Volume 1 , Issue 14: Energy and Sustainability , 2016 , pp. 917 - 922
Copyright
Copyright © Materials Research Society 2016 

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References

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