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Goniometry Versus Profilometry Studies of Contact Angle for PEDOT:PSSDeposited Onto Silicon and Fused Silica Substrates

Published online by Cambridge University Press:  22 December 2015

Kenneth D. Shaughnessy ,
Emma G. Langford ,
Chester Szwejkowski ,
Patrick Hopkins  and
Costel Constantin
Kenneth D. Shaughnessy
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
Emma G. Langford
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
Chester Szwejkowski
Affiliation:
Departmnet of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904
Patrick Hopkins
Affiliation:
Departmnet of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904
Costel Constantin*
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
*
*(Email: constacx@jmu.edu)
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Abstract

This paper presents a comparative study on the effects of plasma type andduration on the contact angle of silicon (Si) and fused silica (FS) for thedeposition of Poly (3,4 ethyldioxythiophene) Polystyrene Sulfonate (PEDOT:PSS)via drop casting. The two methods used to measure contact angles were goniometryand profilometry. Both methods agreed that the lowest contact angles were givenby: 1) 30 seconds in nitrogen/oxygen mix for Si substrates, and 2) 10 minutes inpure oxygen plasma for FS substrates.

Keywords

structuralpolymerorganic

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Type
Articles
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MRS Advances , Volume 1 , Issue 7: Electronics and Photonics , 2016 , pp. 471 - 475
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Groenendaal, L.B., Jonas, F., Freitag, D., Pielartzik, H., and Reynolds, J.R., Adv. Mater . 12, 481 (2000).Google Scholar
Nardes, A.M., Kemerink, M., de Kok, M.M., Vinken, E., Maturova, K., and Janssen, R.A.J., Organic Electronics 9, 727 (2008).Google Scholar
Granstrom, M., Berggren, M., and Ingana, O., Science 267, 1479 (1995).CrossRefGoogle Scholar
Dhanabalan, , van Duren, J.K.J., van Hal, P.A., van Dongen, J.L.J., and Janssen, R.A.J., Adv. Funct. Mater . 11, 255 (2001).3.0.CO;2-I>CrossRefGoogle Scholar
Jonas, F. and Wolf, G.D., U.S. Patent No. 05403467 (1995).Google Scholar
Setiadi, D., He, Z., Hajto, J., and Binnie, T.D., Infrared Phys. Technol . 40, 267 (1999).CrossRefGoogle Scholar
Kato, Y., Jung, M-C, Lee, M. V., Qi, Y., Organic Electronics 15, 721 (2014).Google Scholar
Petasch, W., Kegel, B., Surface and Coatings Technology 97, 176–181 (1997)Google Scholar
Petri, Richard, Brault, Pascal, Journal of Applied Physics 75, 7498 (1994).Google Scholar