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Structural changes in GaAs induced by ultrafast (fs) laser pulses

Published online by Cambridge University Press:  31 January 2011

L. Nánai ,
R. Vajtai ,
Cs. Beleznai ,
J. Remes ,
S. Leppävuori  and
Thomas F. George
L. Nánai
Affiliation:
Department of Experimental Physics, József Attila University, H-6720 Szeged, Dóm tér 9, Hungary
R. Vajtai
Affiliation:
Department of Experimental Physics, József Attila University, H-6720 Szeged, Dóm tér 9, Hungary
Cs. Beleznai
Affiliation:
Department of Experimental Physics, József Attila University, H-6720 Szeged, Dóm tér 9, Hungary
J. Remes
Affiliation:
Microelectronics and Materials Physics Laboratories, University of Oulu, SF-90570 Oulu, Finland
S. Leppävuori
Affiliation:
Microelectronics and Materials Physics Laboratories, University of Oulu, SF-90570 Oulu, Finland
Thomas F. George
Affiliation:
Office of the Chancellor/Departments of Chemistry and Physics & Astronomy, University of Wisconsin–Stevens Point, Stevens Point, Wisconsin 54481-3897
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Extract

Ultrafast changes in the crystal structure of GaAs induced by intense femtosecond laser pulses are detected and investigated. Atomic force microscopy and Raman microprobe analysis of the laser-treated area show centrosymmetric (disordered) features which are different from the original zinc-blend structure of the GaAs lattice. The frozen-in structure shows evidence for a special heat transfer from the laser-induced crater to the boundary, namely the heat has been transferred ballistically by a high-density electron-hole plasma.

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Articles
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Journal of Materials Research , Volume 13 , Issue 7 , July 1998 , pp. 1808 - 1811
Copyright
Copyright © Materials Research Society 1998

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