Hostname: page-component-54dcc4c588-5q6g5 Total loading time: 0 Render date: 2025-10-13T21:25:20.259Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films

Published online by Cambridge University Press:  03 March 2011

Spyros Gallis ,
Harry Efstathiadis ,
Mengbing Huang ,
Ei Ei Nyein ,
Uwe Hommerich  and
Alain E. Kaloyeros
Spyros Gallis
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203
Harry Efstathiadis
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203
Mengbing Huang
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203
Ei Ei Nyein
Affiliation:
Department of Physics, Hampton University, Hampton, Virginia 23668
Uwe Hommerich
Affiliation:
Department of Physics, Hampton University, Hampton, Virginia 23668
Alain E. Kaloyeros*
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203
*
a) Address all correspondence to this author.e-mail: akaloyeros@uamail.albany.edu
Get access

Abstract

Room-temperature photoluminescence (PL) was observed at 1540 nm in erbium-implanted amorphous silicon carbide (a-SiC:Er) films grown by thermal chemical vapor deposition at 800 °C. The PL spectra of the a-SiC:Er samples did not exhibit any defect-generated luminescence, with the PL intensity at 1540 nm dropping only by a factor of 3.6 as the sample temperature was increased from 14 K to room temperature. Time-resolved PL measurements showed that the Er3+ luminescence lifetime of approximately 0.6 ms was nearly independent of sample temperature. In addition, luminescence quenching was observed as implanted Er dose exceeded 7 × 1015 ions/cm2. It is suggested that the lower density of Si and C vacancies in the stoichiometric a-SiC:Er, as compared to its non-stoichiometric a-Si1-xCx counterpart, along with the incorporation of a higher Er dopant concentration, can effectively quench defect-produced luminescence and lead to a significant improvement in PL performance. These properties indicate that stoichiometric a-SiC is potentially a viable candidate for optoelectronic devices operating in the 1540 nm region.

Keywords

AmorphousChemical vapor deposition (CVD)Optical properties

Information

Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004 , pp. 2389 - 2393
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Polman, A.: J. Appl. Phys. 82, 1 (1997).CrossRefGoogle Scholar
2.Coffa, S., Franzò, G. and Priolo, F.: MRS Bull. 23, 25 (1998).CrossRefGoogle Scholar
3.Favennec, P.N., L’Haridon, H., Salvi, M., Moutonnet, D. and Guillon, Y. Le: Electron. Lett. 25, 718 (1989).CrossRefGoogle Scholar
4.Rare Earth Doped Semiconductors II, edited by Coffa, S., Polman, A., and Schwartz, R.N. (Mater. Res. Soc. Symp. Proc. 422, Pittsburgh, PA, 1996).Google Scholar
5.Zanatta, A.R.: Appl. Phys. Lett. 82, 1395 (2003).CrossRefGoogle Scholar
6.Ivanov, I.G., Egilsson, T., Henry, A., Monemar, B. and Janzén, E.: Phys. Rev. B 64, 085203 (2001).CrossRefGoogle Scholar
7.Ma, T., Xu, J., Du, J., Li, W., Huang, X. and Chen, K.: J. Appl. Phys. 88, 6408 (2000).CrossRefGoogle Scholar
8.Terukov, E.I., Kudoyarova, V. Kh., Kuznetsov, A.N., Fuhs, W., Weiser, G. and Küehne, H.: J. Non-Cryst. Solids 227, 488 (1998).CrossRefGoogle Scholar
9.Küehne, H., Weiser, G., Terukov, E.I., Kuznetsov, A.N., and Kudoyarova, V. Kh.. J. Appl. Phys. 86, 896 (1999).CrossRefGoogle Scholar
10.Biersack, J.P. and Haggmark, L.G.: Nucl. Instrum. Methods 174, 257 (1980).CrossRefGoogle Scholar
11.Awahara, K., Uekusa, S., Goto, T., Kobayashi, T. and Kumagai, M.: Nucl. Instrum. Methods Phys. Res., Sect. B 148, 507 (1999).CrossRefGoogle Scholar
12.Przybylinska, H., Jantsch, W., Suprun-Belevitch, Y., Stepikhova, M., Palmetshofer, L., Hendorfer, G., Kozanecki, A., Wilson, R.J. and Sealy, B.J.: Phys. Rev. B 54, 2532 (1996).CrossRefGoogle Scholar
13.Foti, G.: Appl. Surf. Sci. 184, 20 (2001).CrossRefGoogle Scholar
14.Huang, M.B. and Ren, X.T.: Phys. Rev. B 68, 33203 (2003).CrossRefGoogle Scholar
15.Choyke, W.J., Devaty, R.P., Clemen, L.L., Yoganathan, M., Pensl, G. and Hässler, Ch.: Phys. Lett. 65, 1668 (1994).Google Scholar
16.Lu, F., Carius, R., Alam, A., Heuken, M., Rizzi, A. and Buchal, Ch.: Thin Solid Films 425, 171 (2003).Google Scholar
17.Kozanecki, A., Jantsch, W., Lanzerstorfer, S., Sealy, B.J. and Jackson, S.: Mater. Sci. Forum 258, 1545 (1997).CrossRefGoogle Scholar
18.Pellé, F., Auzel, F., Zavada, J.M., Lee, D.S. and Steckl, A.J.: Mater. Sci. Eng. B 105, 126 (2003).CrossRefGoogle Scholar