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Modulation of MS2 virus adsorption on TiO2 semiconductor film by nitrogen doping

Published online by Cambridge University Press:  31 January 2011

Qi Li ,
Wei Liang  and
Jian Ku Shang
Qi Li
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Wei Liang
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Jian Ku Shang*
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
*
a)Address all corresopndence to this author. e-mail: jkshang@uiuc.edu
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Abstract

Nitrogen was doped into titanium dioxide film to alter its surface electrostatic properties, and subsequently modulate the interaction force between MS2 virus and semiconductor films for control of the adsorption behavior of MS2 on semiconductor surfaces. By combining atomic force microscopy (AFM) height profile and phase profile, adsorptions of MS2 virus on TiO2-based semiconductor surfaces were observed in solutions over a range of pH values. The adsorption behavior was shown to agree with the theoretical analysis of colloidal interactions.

Keywords

AdsorptionSemiconductingIon-beam assisted deposition

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Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 11 , November 2007 , pp. 3036 - 3041
Copyright
Copyright © Materials Research Society 2007

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References

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