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Large grain polycrystalline silicon via chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Bruce N. Beckloff ,
W. Jack Lackey  and
Elliott M. Pickering
Bruce N. Beckloff
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
W. Jack Lackey
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
Elliott M. Pickering
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
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Abstract

Large grain polycrystalline Si films were grown by chemical vapor deposition (CVD) onto TiB2 substrates using the SiCl4–H2 reagent system. A statistically designed processing study was used to correlate the film growth rate, crystallographic orientation, and grain size with deposition temperature, the SiCl4 : H2 ratio, and the level of B doping. Each process variable influenced grain size with temperature having the dominant effect. Grains as large as 15 to 20 μm were achieved for a coating thickness of about 50 μm.

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Articles
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Journal of Materials Research , Volume 14 , Issue 3 , March 1999 , pp. 672 - 681
Copyright
Copyright © Materials Research Society 1999

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