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Etching to obtain atomically flat 6H–SiC (000-1) surface after annealing in nitrogen ambient

Published online by Cambridge University Press:  03 March 2011

Masashi Harada ,
Takayuki Nagano  and
Noriyoshi Shibata
Masashi Harada
Affiliation:
Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
Takayuki Nagano
Affiliation:
Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
Noriyoshi Shibata
Affiliation:
Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
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Abstract

The etching process of the 6H–SiC(000-1) surface was investigated to obtain a flat surface by removing scratches due to polishing. An atomically flat surface with a step-terrace structure without scratches has been obtained by removing the graphite layer grown on the substrate after annealing in N2 at a temperature of 1900 °C for 6 h. The step height corresponds to that of a 6H–SiC unit cell. In contrast, a rough surface was observed on the Si face, 6H–SiC (0001), using the same process as for the C face.

Keywords

X-ray photoelectron spectroscopy (XPS)Reflection high-energy electron diffraction (RHEED)Surface chemistry

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Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 6 , June 2004 , pp. 1730 - 1735
Copyright
Copyright © Materials Research Society 2004

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References

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