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Atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Published online by Cambridge University Press:  31 January 2011

J.W. Shin ,
J.Y. Lee ,
Y.S. No ,
T.W. Kim  and
W.K. Choi
J.Y. Lee
Affiliation:
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, South Korea
T.W. Kim*
Affiliation:
Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, South Korea
W.K. Choi
Affiliation:
Thin Film Material Research Center, Korea Institute of Science and Technology, Seoul 136-701, South Korea
*
a) Address all correspondence to this author. e-mail: twk@hanyang.ac.kr
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Abstract

High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin films showed the domain boundaries of a (0) plane with a transition zone and a (1) plane without a transition zone. The 30° in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5° in comparison with that of neighboring 30° in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.

Keywords

NanostructureStructuralTransmission electron microscopy (TEM)

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Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 6 , June 2009 , pp. 2006 - 2010
Copyright
Copyright © Materials Research Society 2009

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