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A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

Published online by Cambridge University Press:  14 March 2012

Dirk Schwantuschke ,
Christian Haupt ,
Rudolf Kiefer ,
Peter Brückner ,
Matthias Seelmann-Eggebert ,
Axel Tessmann ,
Michael Mikulla ,
Ingmar Kallfass  and
Rüdiger Quay
Dirk Schwantuschke*
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Christian Haupt
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Rudolf Kiefer
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Peter Brückner
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Matthias Seelmann-Eggebert
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Axel Tessmann
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Michael Mikulla
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Ingmar Kallfass
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449 Karlsruhe Institute of Technology, Institut für Hochfrequenztechnik und Elektronik, D-76131 Karlsruhe, Germany
Rüdiger Quay
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
*
Corresponding author: D. Schwantuschke Email: dirk.schwantuschke@iaf.fraunhofer.de
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Abstract

In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.

Keywords

100 nm AlGaN/GaNdual-gate HEMTmillimeter-wave GaN HEMTpower amplifiermillimeter-wave amplificationV-bandMMIC

Information

Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 3: European Microwave Week 2011 , June 2012 , pp. 267 - 274
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

REFERENCES

[1]Higaschiwaki, M.; Minura, T.; Matsui, T.: Development of high-frequency GaN HFETs for millimeter-wave applications. IEICE Trans. Electron., E91-C (7) (2008), 984–988.CrossRefGoogle Scholar
[2]Micovic, M. et al. : GaN-MMICs for RF power applications in the 50 GHz to 110 GHz frequency range. Phys. Status Solidi C, 5 (6) (2008), 2044–2046.CrossRefGoogle Scholar
[3]Micovic, M. et al. : GaN-MMICs Pas for E-band (71 GHz–95 GHz) radio, in Proc. IEEE CSISs, Monterey, 2008, 1–4.Google Scholar
[4]Micovic, M. et al. : GaN HFET for W-band power applications, In Tech. Dig. IEEE Int. Electron Device Meeting, San Francisco, 2006, 1–4.Google Scholar
[5]Nakasha, Y. et al. : E-Band 85-mW Oscillator and 1.3-W Amplifier IC's using 0.12-mm GaN HEMTs for Millimeter-wave Transceivers, in IEEE CSIC Symp. Dig., Moneterey, October 2010, 1–4.Google Scholar
[6]Brown, A.; Brown, K.; Chen, J.; Hwang, K.C.; Kolias, N.; Scott, R.: W-Band GaN power amplifier MMICs, in IEEE MTT-S Int. Microwave Symp. Digest (MTT), Baltimore, 2011, 1–4.Google Scholar
[7]Tessmann, A.; Haydl, W.H.; Hülsmann, A.; Schlechtweg, M.: High gain cascode MMICs in coplanar technology at W-band frequencies. IEEE Microw. Guid. Wave Lett., 8 (12) (1998), 430–431.CrossRefGoogle Scholar
[8]Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O.: Development of high transconductance GaN MMIC technology for millimeter-wave applications. Phys. Status Solidi C, 8 (2) (2011), 297–299.CrossRefGoogle Scholar
[9]Quay, R. et al. : Dual-gate GaN MMICs for MM-wave operation. IEEE Microw. Wirel. Compon. Lett., 21 (2) (2011), 95–97.CrossRefGoogle Scholar
[10]Seelmann-Eggebert, M.; Merkle, T.; van Raay, F.; Quay, R.; Schlechtweg, M.: A systematic state-space approach to large-signal transistor modeling. IEEE Trans. Microw. Theory Tech., 55 (2) (2007), 195–205.CrossRefGoogle Scholar
[11]van Raay, F.; Kompa, G.: A 40 GHz large-signal double-reflectometer waveform measurement system designed for load-pull applications, in Proc. 26th European Microwave Conf., Prague, 1996, 657–661.Google Scholar