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60 GHz current gain cut-off frequency graphene nanoribbon FET

Published online by Cambridge University Press:  19 October 2010

Nan Meng ,
Francsico-Javier Ferrer ,
Dominique Vignaud ,
Gilles Dambrine  and
Henri Happy
Nan Meng
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
Francsico-Javier Ferrer
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
Dominique Vignaud
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
Gilles Dambrine
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
Henri Happy*
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
*
Corresponding author: H. Happy Email: henri.happy@iemn.univ-lille1.fr
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Abstract

We report investigations on the fabrication and characterization of graphene nanoribbon (GNR) field-effect transistors. Graphene layers are obtained from the thermal decomposition of a Si-face 4H-SiC substrate. To achieve high dynamic performance, a structure with an array of GNR connected in parallel was fabricated by e-beam lithography. The best intrinsic current gain cut-off frequency of 60 GHz and maximum oscillation frequency of 28 GHz were achieved. This study demonstrates the exciting potential of GNR in high-frequency electronics.

Keywords

Graphene FETRibbonHF characterizationGNR

Information

Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 5 , October 2010 , pp. 441 - 444
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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